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Modified, semiconducting graphene in contact with a metal: characterization of the Schottky diode

dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorCantoro, Mirco
dc.contributor.authorHadipour, Afshin
dc.contributor.authorVosch, Tom
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorHeyns, Marc
dc.contributor.authorSels, Bert
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T19:41:15Z
dc.date.available2021-10-18T19:41:15Z
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17711
dc.sourceIIOimport
dc.titleModified, semiconducting graphene in contact with a metal: characterization of the Schottky diode
dc.typeJournal article
dc.contributor.imecauthorHadipour, Afshin
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage163101
dc.source.journalApplied Physics Letters
dc.source.issue16
dc.source.volume97
imec.availabilityPublished - imec


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