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ALD and parasitic growth characteristics of the tetrakisethylmethylamino hafnium TEMAH/H2O process

dc.contributor.authorNyns, Laura
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSwerts, Johan
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T19:44:29Z
dc.date.available2021-10-18T19:44:29Z
dc.date.issued2010
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17719
dc.sourceIIOimport
dc.titleALD and parasitic growth characteristics of the tetrakisethylmethylamino hafnium TEMAH/H2O process
dc.typeJournal article
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageG225
dc.source.endpageG229
dc.source.journalJournal of the Electrochemical Society
dc.source.issue11
dc.source.volume157
imec.availabilityPublished - open access


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