Show simple item record

Electrical and structural properties of oxygen-precipitation induced extended defects in silicon

dc.contributor.authorClaeys, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.date.accessioned2021-09-30T08:00:35Z
dc.date.available2021-09-30T08:00:35Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1772
dc.sourceIIOimport
dc.titleElectrical and structural properties of oxygen-precipitation induced extended defects in silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1469
dc.source.endpage1486
dc.source.journalJournal de Physique III
dc.source.volume7
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record