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Modeling the capacitance-voltage response of In0.53Ga0.47As MOS structures : charge quantization and nonparabolic corrections

dc.contributor.authorO'Regan, Terrance
dc.contributor.authorHurley, Paul
dc.contributor.authorSoree, Bart
dc.contributor.authorFischetti, Massimo
dc.date.accessioned2021-10-18T19:54:30Z
dc.date.available2021-10-18T19:54:30Z
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17745
dc.sourceIIOimport
dc.titleModeling the capacitance-voltage response of In0.53Ga0.47As MOS structures : charge quantization and nonparabolic corrections
dc.typeJournal article
dc.contributor.imecauthorSoree, Bart
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage213514
dc.source.journalApplied Physics Letters
dc.source.issue21
dc.source.volume96
imec.availabilityPublished - open access


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