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Hall hole mobility in boron-doped homoepitaxial diamond

dc.contributor.authorPernot, J.
dc.contributor.authorVolpe, P.N.
dc.contributor.authorOmnès, F.
dc.contributor.authorMuret, P.
dc.contributor.authorMortet, Vincent
dc.contributor.authorHaenen, Ken
dc.contributor.authorTeraji, T.
dc.date.accessioned2021-10-18T20:13:59Z
dc.date.available2021-10-18T20:13:59Z
dc.date.issued2010
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17794
dc.sourceIIOimport
dc.titleHall hole mobility in boron-doped homoepitaxial diamond
dc.typeJournal article
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage205203
dc.source.journalPhysical Review B
dc.source.issue20
dc.source.volume81
imec.availabilityPublished - open access


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