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Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)

dc.contributor.authorSahhaf, Sahar
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorDe Brabanter, K.
dc.contributor.authorRoussel, Philippe
dc.contributor.authorZahid, Mohammed
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T21:08:37Z
dc.date.available2021-10-18T21:08:37Z
dc.date.issued2010-12
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17927
dc.sourceIIOimport
dc.titleDetailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)
dc.typeJournal article
dc.contributor.imecauthorSahhaf, Sahar
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2614
dc.source.endpage2619
dc.source.journalMicroelectronic Engineering
dc.source.issue12
dc.source.volume87
imec.availabilityPublished - open access


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