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TaN metal gate etch mechanisms in BCl3-based plasmas

dc.contributor.authorShamiryan, Denis
dc.contributor.authorDanila, Andrey
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-18T21:27:46Z
dc.date.available2021-10-18T21:27:46Z
dc.date.issued2010
dc.identifier.issn0734-2101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17972
dc.sourceIIOimport
dc.titleTaN metal gate etch mechanisms in BCl3-based plasmas
dc.typeJournal article
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewyes
dc.source.beginpage302
dc.source.endpage305
dc.source.journalJournal of Vacuum Science and Technology A
dc.source.issue2
dc.source.volume28
imec.availabilityPublished - imec


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