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Si1-xGex growth using Si3H8 by low temperature chemical vapor deposition

dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorNguyen, Duy
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-18T22:09:59Z
dc.date.available2021-10-18T22:09:59Z
dc.date.issued2010
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18063
dc.sourceIIOimport
dc.titleSi1-xGex growth using Si3H8 by low temperature chemical vapor deposition
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpageS18
dc.source.endpageS22
dc.source.journalThin Solid Films
dc.source.issue6, Suppl. 1
dc.source.volume518
imec.availabilityPublished - imec
imec.internalnotes6th Int. Conf. Silicon Epitaxy and Heterostructures


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