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Stability of silicon germanium stressors

dc.contributor.authorTomasini, Pierre
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorThomas, Shawn
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorVerheyen, Peter
dc.date.accessioned2021-10-18T22:24:32Z
dc.date.available2021-10-18T22:24:32Z
dc.date.issued2010
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18095
dc.sourceIIOimport
dc.titleStability of silicon germanium stressors
dc.typeJournal article
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpageS133
dc.source.endpageS135
dc.source.journalThin Solid Films
dc.source.issue6, Suppl. 1
dc.source.volume518
imec.availabilityPublished - imec
imec.internalnotes6th Int. Conf. Silicon Epitaxy and Heterostructures


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