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Modeling the single-gate, double-gate and gate-all-around tunnel field-effect transistor

dc.contributor.authorVerhulst, Anne
dc.contributor.authorSoree, Bart
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorVandenberghe, William
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T23:47:49Z
dc.date.available2021-10-18T23:47:49Z
dc.date.issued2010
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18274
dc.sourceIIOimport
dc.titleModeling the single-gate, double-gate and gate-all-around tunnel field-effect transistor
dc.typeJournal article
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.source.peerreviewyes
dc.source.beginpage24518
dc.source.journalJournal of Applied Physics
dc.source.issue2
dc.source.volume107
imec.availabilityPublished - imec


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