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Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs

dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorMarcon, Denis
dc.contributor.authorDas, Jo
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorCheng, Kai
dc.contributor.authorVandenplas, Erwin
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T00:04:16Z
dc.date.available2021-10-19T00:04:16Z
dc.date.issued2010
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18306
dc.sourceIIOimport
dc.titleLimitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorVandenplas, Erwin
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3333
dc.source.endpage3339
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume57
imec.availabilityPublished - open access


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