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Polymer field-effect transistors fabricated by the sequential gravure printing of polythiophene, two insulator layers, and a metal ink gate

dc.contributor.authorVoigt, M.M.
dc.contributor.authorGuite, A.
dc.contributor.authorChung, D.Y.
dc.contributor.authorKhan, R.U.A.
dc.contributor.authorCampbell, A.J.
dc.contributor.authorBradley, D.D.C.
dc.contributor.authorMeng, F.S.
dc.contributor.authorSteinke, J.H.G.
dc.contributor.authorTierney, S.
dc.contributor.authorMcCulloch, I.
dc.contributor.authorPenxten, H.
dc.contributor.authorLutsen, Laurence
dc.contributor.authorDouheret, Olivier
dc.contributor.authorManca, Jean
dc.contributor.authorBrokman, U.
dc.contributor.authorSonnichsen, K.
dc.contributor.authorHulsenberg, D.
dc.contributor.authorBock, W.
dc.contributor.authorBarron, C.
dc.contributor.authorBlanckaert, N.
dc.contributor.authorSpringer, S.
dc.contributor.authorGrupp, J.
dc.contributor.authorMosley, A.
dc.date.accessioned2021-10-19T00:08:11Z
dc.date.available2021-10-19T00:08:11Z
dc.date.issued2010
dc.identifier.issn1616-301X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18314
dc.sourceIIOimport
dc.titlePolymer field-effect transistors fabricated by the sequential gravure printing of polythiophene, two insulator layers, and a metal ink gate
dc.typeJournal article
dc.contributor.imecauthorLutsen, Laurence
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage239
dc.source.endpage246
dc.source.journalAdvanced Functional Materials
dc.source.issue2
dc.source.volume20
imec.availabilityPublished - open access


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