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dc.contributor.authorWang, Gang
dc.contributor.authorLeys, Maarten
dc.contributor.authorLoo, Roger
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorWaldron, Niamh
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDekoster, Johan
dc.contributor.authorWang, Wei-E
dc.contributor.authorSeefeldt, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-19T00:14:38Z
dc.date.available2021-10-19T00:14:38Z
dc.date.issued2010-09
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18328
dc.sourceIIOimport
dc.titleSelective area growth of high quality InP on Si (001) substrates
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage121913-1
dc.source.journalApplied Physics Letters
dc.source.issue12
dc.source.volume97
dc.identifier.urlhttp://link.aip.org/link/?APL/97/121913
imec.availabilityPublished - open access


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