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dc.contributor.authorWang, Gang
dc.contributor.authorLeys, Maarten
dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorBrammertz, Guy
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorDekoster, Johan
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T00:15:16Z
dc.date.available2021-10-19T00:15:16Z
dc.date.issued2010
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18329
dc.sourceIIOimport
dc.titleSelective area growth of InP in shallow trench isloated structures on off-axis Si (001) substrates
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageH1023
dc.source.endpageH1028
dc.source.journalJournal of the Electrochemical Society
dc.source.issue11
dc.source.volume157
imec.availabilityPublished - open access


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