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Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates

dc.contributor.authorWang, Gang
dc.contributor.authorRosseel, Erik
dc.contributor.authorLoo, Roger
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-19T00:18:04Z
dc.date.available2021-10-19T00:18:04Z
dc.date.issued2010-12
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18334
dc.sourceIIOimport
dc.titleGe instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates
dc.typeJournal article
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage123517
dc.source.journalJournal of Applied Physics
dc.source.issue12
dc.source.volume108
dc.identifier.urlhttp://link.aip.org/link/?JAP/108/123517
imec.availabilityPublished - open access


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