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High quality Ge epitaxial layers in narrow channels on Si (001) substrates

dc.contributor.authorWang, Gang
dc.contributor.authorRosseel, Erik
dc.contributor.authorLoo, Roger
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-19T00:18:35Z
dc.date.available2021-10-19T00:18:35Z
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18335
dc.sourceIIOimport
dc.titleHigh quality Ge epitaxial layers in narrow channels on Si (001) substrates
dc.typeJournal article
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage111903
dc.source.journalApplied Physics Letters
dc.source.issue11
dc.source.volume96
imec.availabilityPublished - open access


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