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The impact of back-side Cu contamination on 3D stacking architecture

dc.contributor.authorYang, Yu
dc.contributor.authorLabie, Riet
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorZhao, Chao
dc.contributor.authorVerlinden, Bert
dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-19T00:42:19Z
dc.date.available2021-10-19T00:42:19Z
dc.date.issued2010
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18382
dc.sourceIIOimport
dc.titleThe impact of back-side Cu contamination on 3D stacking architecture
dc.typeJournal article
dc.contributor.imecauthorLabie, Riet
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecLabie, Riet::0000-0002-1401-1291
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageH39
dc.source.endpageH41
dc.source.journalElectrochemical and Solid-State Letters
dc.source.issue2
dc.source.volume13
imec.availabilityPublished - open access


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