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Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorChou, H.-Y.
dc.contributor.authorHoussa, M.
dc.contributor.authorLamagna, L.
dc.contributor.authorLamperti, A.
dc.contributor.authorMolle, A.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorBrammertz, Guy
dc.date.accessioned2021-10-19T12:28:24Z
dc.date.available2021-10-19T12:28:24Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18450
dc.sourceIIOimport
dc.titleTransitivity of band offsets between semiconductor heterojunctions and oxide insulators
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage172101
dc.source.journalApplied Physics Letters
dc.source.issue17
dc.source.volume99
imec.availabilityPublished - open access


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