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Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorChou, H. C.
dc.contributor.authorStesmans, Andre
dc.contributor.authorMerckling, Clement
dc.contributor.authorSun, Xiao
dc.date.accessioned2021-10-19T12:28:26Z
dc.date.available2021-10-19T12:28:26Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18451
dc.sourceIIOimport
dc.titleBand offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorSun, Xiao
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage1050
dc.source.endpage1053
dc.source.journalMicroelectronic Engineering
dc.source.issue7
dc.source.volume88
imec.availabilityPublished - imec
imec.internalnotesINFOS paper


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