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Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorChou, H.-Y.
dc.contributor.authorStesmans, Andre
dc.contributor.authorMerckling, Clement
dc.contributor.authorSun, Xiao
dc.date.accessioned2021-10-19T12:28:27Z
dc.date.available2021-10-19T12:28:27Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18452
dc.sourceIIOimport
dc.titleElectron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorSun, Xiao
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage72102
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume98
imec.availabilityPublished - imec


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