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Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.authorMerckling, Clement
dc.contributor.authorSchram, Tom
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-19T12:28:28Z
dc.date.available2021-10-19T12:28:28Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18453
dc.sourceIIOimport
dc.titleInfluence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorSchram, Tom
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.source.peerreviewyes
dc.source.beginpage72103
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume99
imec.availabilityPublished - imec


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