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Processing dependences of channel hot-carrier degradation on strained-S- p-channel metal-oxide semiconductor field-effect transistors

dc.contributor.authorAmat, E.
dc.contributor.authorMartin-Martinez, J.
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorRodriguez, R.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorVerheyen, Peter
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-19T12:29:03Z
dc.date.available2021-10-19T12:29:03Z
dc.date.issued2011
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18475
dc.sourceIIOimport
dc.titleProcessing dependences of channel hot-carrier degradation on strained-S- p-channel metal-oxide semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage01AB07
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume29
imec.availabilityPublished - open access


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