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CHC degradation of strained devices based on SiON and high-k gate dielectric materials

dc.contributor.authorAmat, E.
dc.contributor.authorRodriguez, R.
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorMartin-Martinez, J.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorVerheyen, Peter
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-19T12:29:05Z
dc.date.available2021-10-19T12:29:05Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18476
dc.sourceIIOimport
dc.titleCHC degradation of strained devices based on SiON and high-k gate dielectric materials
dc.typeJournal article
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1408
dc.source.endpage1411
dc.source.journalMicroelectronic Engineering
dc.source.issue7
dc.source.volume88
imec.availabilityPublished - open access
imec.internalnotesINFOS 2011 paper


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