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Effect of high temperature annealing on tunnel oxide properties in TANOS devices

dc.contributor.authorArreghini, Antonio
dc.contributor.authorZahid, Mohammed
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorSuhane, Amit
dc.contributor.authorBreuil, Laurent
dc.contributor.authorCacciato, Antonio
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-19T12:29:45Z
dc.date.available2021-10-19T12:29:45Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18492
dc.sourceIIOimport
dc.titleEffect of high temperature annealing on tunnel oxide properties in TANOS devices
dc.typeJournal article
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage1155
dc.source.endpage1158
dc.source.journalMicroelectronic Engineering
dc.source.issue7
dc.source.volume88
imec.availabilityPublished - imec
imec.internalnotesINFOS 2011 paper


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