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Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K

dc.contributor.authorGutiérrez Dominguez, E. A.
dc.contributor.authorDeferm, Ludo
dc.contributor.authorDeclerck, Gilbert
dc.date.accessioned2021-09-29T12:41:51Z
dc.date.available2021-09-29T12:41:51Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/184
dc.sourceIIOimport
dc.titleSeries resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K
dc.typeJournal article
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.imecauthorDeclerck, Gilbert
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageC6
dc.source.endpage31-36
dc.source.journalJournal de Physique IV (Colloque)
dc.source.issueC6
dc.source.volume4
imec.availabilityPublished - open access


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