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NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance

dc.contributor.authorAyala, N.
dc.contributor.authorMartin-Martinez, J.
dc.contributor.authorAmat, E.
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorVerheyen, Peter
dc.contributor.authorRodriguez, R.
dc.contributor.authorNafria, M.
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-19T12:30:30Z
dc.date.available2021-10-19T12:30:30Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18506
dc.sourceIIOimport
dc.titleNBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance
dc.typeJournal article
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1384
dc.source.endpage1387
dc.source.journalMicroelectronic Engineering
dc.source.issue7
dc.source.volume88
imec.availabilityPublished - open access
imec.internalnotesProc. of INFOS 2011


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