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Reliability of ultra-thin gate oxide below 3 nm in the direct tunneling regime

dc.contributor.authorDepas, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorNigam, Tanya
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-30T08:11:35Z
dc.date.available2021-09-30T08:11:35Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1851
dc.sourceIIOimport
dc.titleReliability of ultra-thin gate oxide below 3 nm in the direct tunneling regime
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1602
dc.source.endpage1608
dc.source.journalJapanese Journal of Applied Physics. Part 1
dc.source.issue3B
dc.source.volume36
imec.availabilityPublished - open access


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