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dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSijmus, Bram
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T12:46:08Z
dc.date.available2021-10-19T12:46:08Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18669
dc.sourceIIOimport
dc.titleAlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpage204
dc.source.endpage207
dc.source.journalJournal of Crystal Growth
dc.source.issue1
dc.source.volume315
imec.availabilityPublished - imec


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