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AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSijmus, Bram
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T12:46:08Z
dc.date.available2021-10-19T12:46:08Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18669
dc.sourceIIOimport
dc.titleAlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpage204
dc.source.endpage207
dc.source.journalJournal of Crystal Growth
dc.source.issue1
dc.source.volume315
imec.availabilityPublished - imec


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