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GaN-Epi-Layer auf 200mm-Si-Substraten für LEDs

dc.contributor.authorCheng, Kai
dc.contributor.authorDekoster, Johan
dc.contributor.authorJun, Sung Won
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.date.accessioned2021-10-19T12:46:15Z
dc.date.available2021-10-19T12:46:15Z
dc.date.issued2011-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18670
dc.sourceIIOimport
dc.titleGaN-Epi-Layer auf 200mm-Si-Substraten für LEDs
dc.typeJournal article
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.source.peerreviewno
dc.source.journalEnergie & Technik
dc.identifier.urlhttp://www.energie-und-technik.de/lighting/technik-know-how/leds/article/81444/0/GaN-Epi-Layer_auf_200mm-Si-Substraten_fuer_LEDs
imec.availabilityPublished - imec
imec.internalnoteselectronic resource


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