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Growing GaN Epi layers on 200 mm silicon substrates for LED applications

dc.contributor.authorCheng, Kai
dc.contributor.authorDekoster, Johan
dc.contributor.authorJun, Sung Won
dc.contributor.authorDel-Agua-Borniquel, Jose-Ignacio
dc.date.accessioned2021-10-19T12:46:23Z
dc.date.available2021-10-19T12:46:23Z
dc.date.issued2011-07
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18671
dc.sourceIIOimport
dc.titleGrowing GaN Epi layers on 200 mm silicon substrates for LED applications
dc.typeJournal article
dc.contributor.imecauthorDekoster, Johan
dc.source.peerreviewno
dc.source.beginpage28
dc.source.endpage32
dc.source.journalLED Professional Review
dc.source.issue26
imec.availabilityPublished - imec


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