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GaN-Epi-Layer auf 200-mm-Si-Substraten fur LEDs

dc.contributor.authorCheng, Kai
dc.contributor.authorDekoster, Johan
dc.contributor.authorJun, Sung Won
dc.contributor.authorDel-Agua-Borniquel, Jose-Ignacio
dc.date.accessioned2021-10-19T12:46:31Z
dc.date.available2021-10-19T12:46:31Z
dc.date.issued2011-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18672
dc.sourceIIOimport
dc.titleGaN-Epi-Layer auf 200-mm-Si-Substraten fur LEDs
dc.typeJournal article
dc.contributor.imecauthorDekoster, Johan
dc.source.peerreviewno
dc.source.beginpage15
dc.source.endpage18
dc.source.journalMarkt&Technik
dc.source.issue33
imec.availabilityPublished - imec


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