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Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition

dc.contributor.authorChou, H. Y.
dc.contributor.authorBadylevich, M.
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, M.
dc.contributor.authorStesmans, A.
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKittl, Jorge
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-19T12:49:53Z
dc.date.available2021-10-19T12:49:53Z
dc.date.issued2011-12
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18694
dc.sourceIIOimport
dc.titleElectronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition
dc.typeJournal article
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage113724
dc.source.journalJournal of Applied Physics
dc.source.issue11
dc.source.volume110
dc.identifier.urlhttp://link.aip.org/link/?JAP/110/113724
imec.availabilityPublished - imec


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