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Co silicide formation on SiGeC/Si and SiGe/Si layers

dc.contributor.authorDonaton, R. A.
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.contributor.authorMorciaux, Y.
dc.contributor.authorSt. Amour, A.
dc.contributor.authorSturm, J. C.
dc.date.accessioned2021-09-30T08:14:30Z
dc.date.available2021-09-30T08:14:30Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1869
dc.sourceIIOimport
dc.titleCo silicide formation on SiGeC/Si and SiGe/Si layers
dc.typeJournal article
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1266
dc.source.endpage1268
dc.source.journalApplied Physics Letters
dc.source.volume70
imec.availabilityPublished - open access


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