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Aqueous solutions for low-temperature photoannealing of functional oxide films: reaching the 400 degrees C Si-technology integration barrier

dc.contributor.authorDe Dobbelaere, C.
dc.contributor.authorCalzada, M.L.
dc.contributor.authorJimenez, R.
dc.contributor.authorRicote, J.
dc.contributor.authorBretos, I.
dc.contributor.authorMullens, J.
dc.contributor.authorHardy, An
dc.contributor.authorVan Bael, Marlies
dc.date.accessioned2021-10-19T13:04:10Z
dc.date.available2021-10-19T13:04:10Z
dc.date.issued2011
dc.identifier.issn0002-7863
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18781
dc.sourceIIOimport
dc.titleAqueous solutions for low-temperature photoannealing of functional oxide films: reaching the 400 degrees C Si-technology integration barrier
dc.typeJournal article
dc.contributor.imecauthorHardy, An
dc.contributor.imecauthorVan Bael, Marlies
dc.contributor.orcidimecVan Bael, Marlies::0000-0002-5516-7962
dc.source.peerreviewyes
dc.source.beginpage12922
dc.source.endpage12925
dc.source.journalJournal of the American Chemical Society
dc.source.issue33
dc.source.volume133
imec.availabilityPublished - imec


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