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Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks

dc.contributor.authorFadida, Sivan
dc.contributor.authorEisenberg, Moshe
dc.contributor.authorNyns, Laura
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T13:28:36Z
dc.date.available2021-10-19T13:28:36Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18895
dc.sourceIIOimport
dc.titleBand alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks
dc.typeJournal article
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.identifier.doi10.1016/j.mee.2011.03.075
dc.source.peerreviewyes
dc.source.beginpage1557
dc.source.endpage1559
dc.source.journalMicroelectronic Engineering
dc.source.issue7
dc.source.volume88
imec.availabilityPublished - imec
imec.internalnotesConference proceedings INFOS 2011


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