Show simple item record

Another approach to form p+ emitter for rear junction n-type solar cells: above 17.0% efficiency cells with CVD boron-doped epitaxial emitter

dc.contributor.authorGong, Chun
dc.contributor.authorVan Nieuwenhuysen, Kris
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Kerschaver, Emmanuel
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-19T13:48:49Z
dc.date.available2021-10-19T13:48:49Z
dc.date.issued2011
dc.identifier.issn0927-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18973
dc.sourceIIOimport
dc.titleAnother approach to form p+ emitter for rear junction n-type solar cells: above 17.0% efficiency cells with CVD boron-doped epitaxial emitter
dc.typeJournal article
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage11
dc.source.endpage13
dc.source.journalSolar Energy Materials and Solar Cells
dc.source.issue1
dc.source.volume95
dc.identifier.urlhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6V51-4YYVCMY-4&_user=799533&_coverDate=01%2F31%2F2011&_rdoc=1&_fmt=hig
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record