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dc.contributor.authorGoux, Ludovic
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorChou, H.-Y.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorToeller, Michael
dc.contributor.authorWang, X.P.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorRichard, Olivier
dc.contributor.authorKittl, Jorge
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAltimime, Laith
dc.date.accessioned2021-10-19T13:53:08Z
dc.date.available2021-10-19T13:53:08Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18989
dc.sourceIIOimport
dc.titleEvidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage24
dc.source.endpage25
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate13/06/2011
dc.source.conferencelocationJapan Kyoto
imec.availabilityPublished - open access


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