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Growth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates

dc.contributor.authorGrietens, Bob
dc.contributor.authorNemeth, Stefan
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorVan Daele, Peter
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-09-30T08:20:27Z
dc.date.available2021-09-30T08:20:27Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1901
dc.sourceIIOimport
dc.titleGrowth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates
dc.typeJournal article
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage295
dc.source.endpage298
dc.source.journalIEE Proceedings - Optoelectronics
dc.source.issue5
dc.source.volume144
imec.availabilityPublished - open access


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