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High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

dc.contributor.authorHibino, Daisuke
dc.contributor.authorShindo, Hiroyuki
dc.contributor.authorAbe, Yuichi
dc.contributor.authorHojyo, Yutaka
dc.contributor.authorFenger, Germain
dc.contributor.authorDo, Thuy
dc.contributor.authorKusnadi, Ir
dc.contributor.authorSturtevant, John L.
dc.contributor.authorVan de Kerkhove, Jeroen
dc.contributor.authorDe Bisschop, Peter
dc.date.accessioned2021-10-19T14:19:19Z
dc.date.available2021-10-19T14:19:19Z
dc.date.issued2011-02
dc.identifier.issn1537-1646
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19077
dc.sourceIIOimport
dc.titleHigh-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography
dc.typeJournal article
dc.contributor.imecauthorVan de Kerkhove, Jeroen
dc.contributor.imecauthorDe Bisschop, Peter
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage13012
dc.source.journalJournal of Micro/Nanolithography MEMS and MOEMS
dc.source.issue1
dc.source.volume10
imec.availabilityPublished - open access


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