High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography
dc.contributor.author | Hibino, Daisuke | |
dc.contributor.author | Shindo, Hiroyuki | |
dc.contributor.author | Abe, Yuichi | |
dc.contributor.author | Hojyo, Yutaka | |
dc.contributor.author | Fenger, Germain | |
dc.contributor.author | Do, Thuy | |
dc.contributor.author | Kusnadi, Ir | |
dc.contributor.author | Sturtevant, John L. | |
dc.contributor.author | Van de Kerkhove, Jeroen | |
dc.contributor.author | De Bisschop, Peter | |
dc.date.accessioned | 2021-10-19T14:19:19Z | |
dc.date.available | 2021-10-19T14:19:19Z | |
dc.date.issued | 2011-02 | |
dc.identifier.issn | 1537-1646 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19077 | |
dc.source | IIOimport | |
dc.title | High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography | |
dc.type | Journal article | |
dc.contributor.imecauthor | Van de Kerkhove, Jeroen | |
dc.contributor.imecauthor | De Bisschop, Peter | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 13012 | |
dc.source.journal | Journal of Micro/Nanolithography MEMS and MOEMS | |
dc.source.issue | 1 | |
dc.source.volume | 10 | |
imec.availability | Published - open access |