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Temperature-dependent modeling and characterization of Through Silicon Via (TSV) capacitance

dc.contributor.authorKatti, Guruprasad
dc.contributor.authorStucchi, Michele
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorSoree, Bart
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDehaene, Wim
dc.date.accessioned2021-10-19T14:45:42Z
dc.date.available2021-10-19T14:45:42Z
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19162
dc.sourceIIOimport
dc.titleTemperature-dependent modeling and characterization of Through Silicon Via (TSV) capacitance
dc.typeJournal article
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorVelenis, Dimitrios
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDehaene, Wim
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage563
dc.source.endpage565
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume32
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5722016
imec.availabilityPublished - open access


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