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Drive current enhancement in p-tunnel FETs by optimization of the process conditions

dc.contributor.authorLeonelli, Daniele
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T15:21:50Z
dc.date.available2021-10-19T15:21:50Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19271
dc.sourceIIOimport
dc.titleDrive current enhancement in p-tunnel FETs by optimization of the process conditions
dc.typeJournal article
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage28
dc.source.endpage32
dc.source.journalSolid-State Electronics
dc.source.volume65-66
imec.availabilityPublished - imec


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