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Mechanisms of Schottky barrier control on n-type germanium using Ge3N4 interlayers

dc.contributor.authorLieten, Ruben
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorThoan, Nguyen Hoang
dc.contributor.authorDegroote, Stefan
dc.contributor.authorWalukiewicz, Wladek
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T15:30:34Z
dc.date.available2021-10-19T15:30:34Z
dc.date.issued2011
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19297
dc.sourceIIOimport
dc.titleMechanisms of Schottky barrier control on n-type germanium using Ge3N4 interlayers
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpageH358
dc.source.endpageH362
dc.source.journalJournal of the Electrochemical Society
dc.source.issue4
dc.source.volume158
dc.identifier.urlhttp://link.aip.org/link/?JES/158/H358
imec.availabilityPublished - imec


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