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Mg doping of GaN by molecular beam epitaxy

dc.contributor.authorLieten, Ruben
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorZhang, Liyang
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorBuchowicz, Grant
dc.contributor.authorDubon, Oscar
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T15:31:20Z
dc.date.available2021-10-19T15:31:20Z
dc.date.issued2011
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19299
dc.sourceIIOimport
dc.titleMg doping of GaN by molecular beam epitaxy
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.source.peerreviewyes
dc.source.beginpage135406
dc.source.journalJournal of Physics D: Applied Physics
dc.source.issue13
dc.source.volume44
dc.identifier.urlhttp://iopscience.iop.org/0022-3727/44/13/135406/
imec.availabilityPublished - imec


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