dc.contributor.author | Lieten, Ruben | |
dc.contributor.author | Richard, Olivier | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Bender, Hugo | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-19T15:31:42Z | |
dc.date.available | 2021-10-19T15:31:42Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 0022-0248 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19300 | |
dc.source | IIOimport | |
dc.title | Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy | |
dc.type | Journal article | |
dc.contributor.imecauthor | Lieten, Ruben | |
dc.contributor.imecauthor | Richard, Olivier | |
dc.contributor.imecauthor | Bender, Hugo | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.contributor.orcidimec | Richard, Olivier::0000-0002-3994-8021 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 71 | |
dc.source.endpage | 75 | |
dc.source.journal | Journal of Crystal Growth | |
dc.source.issue | 1 | |
dc.source.volume | 314 | |
dc.identifier.url | http://dx.doi.org/10.1016/j.jcrysgro.2010.10.146 | |
imec.availability | Published - imec | |