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Room-temperature solution-processed high-k gate dielectrics for large area electronics applications

dc.contributor.authorLin, Wan-Yu
dc.contributor.authorMuller, Robert
dc.contributor.authorMyny, Kris
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-19T15:33:31Z
dc.date.available2021-10-19T15:33:31Z
dc.date.issued2011
dc.identifier.issn1566-1199
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19305
dc.sourceIIOimport
dc.titleRoom-temperature solution-processed high-k gate dielectrics for large area electronics applications
dc.typeJournal article
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage955
dc.source.endpage960
dc.source.journalOrganic Electronics
dc.source.issue6
dc.source.volume12
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S1566119911000930
imec.availabilityPublished - open access


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