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Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal

dc.contributor.authorLiu, W.H.
dc.contributor.authorPey, K.L.
dc.contributor.authorWu, X.
dc.contributor.authorRaghavan, N.
dc.contributor.authorPadovani, A.
dc.contributor.authorLarcher, L.
dc.contributor.authorVandelli, L.
dc.contributor.authorBosman, M.
dc.contributor.authorKauerauf, Thomas
dc.date.accessioned2021-10-19T15:38:56Z
dc.date.available2021-10-19T15:38:56Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19320
dc.sourceIIOimport
dc.titleThreshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage232909
dc.source.journalApplied Physics Letters
dc.source.issue23
dc.source.volume99
imec.availabilityPublished - open access


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