dc.contributor.author | Loo, Roger | |
dc.contributor.author | Vincent, Benjamin | |
dc.date.accessioned | 2021-10-19T15:43:47Z | |
dc.date.available | 2021-10-19T15:43:47Z | |
dc.date.issued | 2011-08 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19334 | |
dc.source | IIOimport | |
dc.title | Selective CVD growth of germanium-tin: a new approach for implementing stress in germanium-based MOSFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Vincent, Benjamin | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.source.peerreview | no | |
dc.source.journal | Tech Design Forum | |
dc.identifier.url | http://www.techdesignforums.com/eda/eda-topics/design-to-silicon/selective-cvd-growth-of-germanium-tin-a-new-approach-for-implem | |
imec.availability | Published - imec | |