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Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions

dc.contributor.authorLuque Rodriguez, Abraham
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorEneman, Geert
dc.contributor.authorClaeys, Cor
dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorSimoen, Eddy
dc.contributor.authorJiménez Tejada, Juan A.
dc.date.accessioned2021-10-19T15:48:47Z
dc.date.available2021-10-19T15:48:47Z
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19347
dc.sourceIIOimport
dc.titleImpact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2362
dc.source.endpage2370
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue8
dc.source.volume58
imec.availabilityPublished - open access


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