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Understanding the potential and the limits of germanium pMOSFETs for VLSI circuits from experimental measurements

dc.contributor.authorMagnone, P.
dc.contributor.authorCrupi, Felice
dc.contributor.authorAlioto, M.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Jaeger, Brice
dc.date.accessioned2021-10-19T15:51:22Z
dc.date.available2021-10-19T15:51:22Z
dc.date.issued2011
dc.identifier.issn1063-8210
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19354
dc.sourceIIOimport
dc.titleUnderstanding the potential and the limits of germanium pMOSFETs for VLSI circuits from experimental measurements
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1569
dc.source.endpage1582
dc.source.journalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
dc.source.issue9
dc.source.volume19
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5508322
imec.availabilityPublished - open access


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