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Self-seeded, position-controlled InAs nanowire growth on Si: a growth parameter study

dc.contributor.authorMandl, Bernhard
dc.contributor.authorDey, Anil W.
dc.contributor.authorStangl, Julian
dc.contributor.authorCantoro, Mirco
dc.contributor.authorWernersson, Lars-Erik
dc.contributor.authorBauer, Gunther
dc.contributor.authorDeppert, Knut
dc.contributor.authorThelander, Claes
dc.date.accessioned2021-10-19T15:57:58Z
dc.date.available2021-10-19T15:57:58Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19371
dc.sourceIIOimport
dc.titleSelf-seeded, position-controlled InAs nanowire growth on Si: a growth parameter study
dc.typeJournal article
dc.source.peerreviewyes
dc.source.beginpage51
dc.source.endpage56
dc.source.journalJournal of Crystal Growth
dc.source.issue1
dc.source.volume334
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0022024811007068
imec.availabilityPublished - imec


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